BTA204W-600E /T3 datasheet

Маркировка

BTA204W-600E /T3
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BTA204W-600E /T3 Breakover Current Ibo Max: 11 A Forward Voltage Drop: 1.5 V @ 2 A Gate Trigger Current (igt): 10 mA Gate Trigger Voltage (vgt): 1.5 V Holding Current (ih Max): 12 mA Mounting Style: SMD/SMT Off-state Leakage Current @ Vdrm Idrm: 0.5 mA Package / Case: SOT-223 Rated Repetitive Off-state Voltage Vdrm: 600 V Repetitive Peak Forward Blocking Voltage: 600 V Product Category: Triacs RoHS: yes Non Repetitive On-State Current: 11 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.1 mA On-State Voltage: 1.5 V Holding Current (Ih Max): 12 mA Gate Trigger Voltage (Vgt): 1.5 V Gate Trigger Current (Igt): 10 mA Factory Pack Quantity: 4000 Part # Aliases: BTA204W-600E,135 Other Names: BTA204W-600E,135
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8 шт.
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